세라믹(CERAMIC)
Aluminium nitride_AIN Product
| Properties | Condition | Unit | Dry Press | ||
|---|---|---|---|---|---|
| AN-230 | AN-210 | AN-180 | |||
| Density | ㅡ | g/㎤ | 3.33 | 3.33 | 3.32 |
| Thermal Conductivity | 25℃ | W/m.K | 230 | 210 | 180 |
| Bending Strength | 3-oint method,25℃ | Mpa | 200 | 300 | 410 |
| Insulation | 25℃ | KV/mm | 25 | 27 | 31 |
| Volume Resistivity | 25℃ | Ω.㎝ | 2.8x1013 | 6.5x1013 | 3.4x1014 |
| Dielectric Constant | 1MHz | ㅡ | 8.9 | 8.9 | 8.8 |
| Dielectric Loss | 1MHz | ㅡ | 4.6x10-4 | 5.0x10-4 | 6.5x10-4 |
| CTE | 25~400 ℃ | x10-6/K | 4.9 | 4.9 | 4.6 |
Boron nitride _BN Product
| Typical Value | BN-HS | BN-HQ | BN-HC | |
|---|---|---|---|---|
| Purity(%) | BN>99.7% | BN>99.3% | BN>99% | |
| Color | White | White | White | |
| Density(g/㎤) | 1.3-1.4 | 1.5-1.6 | 1.9-2.0 | |
| Oxygen Content (%) | ≤ 0.1 | ≤ 0.1 | ≤ 0.35 | |
| Volume Resistivity(Ω.㎝) | >1014 | >1014 | >1014 | |
| Operating temp (℃) | Air | ≤ 900 | ≤ 900 | ≤ 900 |
| Inert gas | ≤ 2100 | ≤ 2100 | ≤ 2100 | |
| Vaccum | ≤ 1900 | ≤ 1900 | ≤ 1900 | |
| Bending strength (Mpa) | 18 | 30 | 40 | |
| Coefficient or thermal expansion (10-6/℃) | -0.4 | -0.4 | 1.5 | |
| Thermal conductivity (W/m.K) | 60 | 50 | 35 | |
Silicon carbide_ SIC Product
| Type | Recrystallized SiC | Sintered SiC | Reaction Bonded SiC |
|---|---|---|---|
| Purity of Silicon Carbide | 99.50% | 98% | >88% |
| Max. Working Temp. (`C) | 1650 | 1550 | 1300 |
| Bulk Density (g/cm3) | 2.7 | 3.1 | >3 |
| Appearance Porosity | <15% | 2.5 | 0.1 |
| Flexural strength (MPa) | 110 | 400 | 380 |
| Compressive strength (MPa) | >300 | 2200 | 2100 |
| Thermal expansion (10^-6/`C) | 4.6 (1200`C) | 4.0 (<500`C) | 4.4 (<500`C) |
| Thermal conductivity (W/m.K) | 35~36 | 110 | 65 |
| Main characteristics | High temp. High resistance. High purity |
Fracture Toughness | Chemical Resistance |